Band Gap Measurement of Sintered Cd1-xZ xTe Sintered films From Reflection Spectra

Authors

  • Seema Teotia

Keywords:

Band gap,, Reflection spectra,, Semiconductors,, Screen printing.

Abstract

Sintered Cd1-xZnxTe films have been prepared in the entire composition range from CdTe to ZnTe by using the screen printing method. To deposit good quality films, optimum conditions have been determined. Wide band gap ternary films have wide applications in solar cells. The band gap of these films is determined by reflection spectra in the wavelength range of 500 nm to 870 nm using the Tauc relation. These films have a direct band gap, which varies from 1.48 eV for CdTe to 2.26 eV for ZnTe films.

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References

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Published

22-08-2021

How to Cite

Seema Teotia. (2021). Band Gap Measurement of Sintered Cd1-xZ xTe Sintered films From Reflection Spectra. Research Ambition an International Multidisciplinary E-Journal, 1(I), 207–211. Retrieved from http://researchambition.com/RA/index.php/ra/article/view/27

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